High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2, and HfAlO as gate dielectrics

被引：170

作者：

Xuan, Y. ^{[1
]}

Wu, Y. Q. ^{[1
]}

Shen, T. ^{[1
]}

Yang, T. ^{[1
]}

Ye, P. D. ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47906 USA

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-performance inversion-type enhancement-mod n-channel In0.53Ga0.47As MOSFETs with atomic layer deposited (ALD) Al2O3 HfO2 and HfAlO as gate dielectrics are demonstrated. The ALD process on Ill-V compound semiconductors enables the formation of high-quality gate oxides and unpinning of Fermi level on III-V in general. A 0.5-mu m gate-length MOSFET with an Al2O3 gate oxide thickness of 8 nm shows a maximum drain current of 430 mA/mm and a transconductance of 160 mA/mm at drain voltage of 2 V. The transconductance is improved to 180 mA/mm by implementing HfO2 or HfAlO as gate dielectrics with the same oxide thickness. The peak effective mobility is similar to 1200 cm(2)/Vs from dc measurement, similar to 4000 cm(2)/Vs after interface trap correction for HfO2/In0.53Ga0.47As NMOSFETs.

引用

页码：637 / 640

页数：4

共 11 条

[1]

[Anonymous], INT EL DEV M

[2]

Gao F., 2006, IEDM, P833

[3] Enhancement-mode GaAs n-channel MOSFET [J].

Rajagopalan, Karthik ;

Abrokwah, Jonathan ;

Droopad, Ravi ;

Passlack, Matthias .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (12) :959-962

[4] Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFET's [J].

Ren, F ;

Kuo, JM ;

Hong, M ;

Hobson, WS ;

Lothian, JR ;

Lin, J ;

Tsai, HS ;

Mannaerts, JP ;

Kwo, J ;

Chu, SNG ;

Chen, YK ;

Cho, AY .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (08) :309-311

[5] Enhancement-mode buried-channel In0.7Ga0.3As/In0.52Al0.48As MOSFETs with high-κ gate dielectrics [J].

Sun, Yanning ;

Kiewra, E. W. ;

Koester, S. J. ;

Ruiz, N. ;

Callegari, A. ;

Fogel, K. E. ;

Sadana, D. K. ;

Fompeyrine, J. ;

Webb, D. J. ;

Locquet, J.-P. ;

Sousa, M. ;

Germann, R. ;

Shiu, K. T. ;

Forrest, S. R. .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (06) :473-475

[6] Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric [J].

Xuan, Y. ;

Lin, H. C. ;

Ye, P. D. ;

Wilk, G. D. .

APPLIED PHYSICS LETTERS, 2006, 88 (26)

[7]

XUAN Y, IEEE ELECT IN PRESS

[8] Simplified surface preparation for GaAs passivation using atomic layer-deposited high-κ dielectrics [J].

Xuan, Yi ;

Lin, Hung-Chun ;

Ye, Peide D. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (08) :1811-1817

[9]

YANG T, APPL PHYS L IN PRESS

[10] GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition [J].

Ye, PD ;

Wilk, GD ;

Kwo, J ;

Yang, B ;

Gossmann, HJL ;

Frei, M ;

Chu, SNG ;

Mannaerts, JP ;

Sergent, M ;

Hong, M ;

Ng, KK ;

Bude, J .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (04) :209-211

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