GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

被引：191

作者：

Ye, PD ^{[1
]}

Wilk, GD ^{[1
]}

Kwo, J ^{[1
]}

Yang, B ^{[1
]}

Gossmann, HJL ^{[1
]}

Frei, M ^{[1
]}

Chu, SNG ^{[1
]}

Mannaerts, JP ^{[1
]}

Sergent, M ^{[1
]}

Hong, M ^{[1
]}

Ng, KK ^{[1
]}

Bude, J ^{[1
]}

机构：

[1] Agere Syst, Murray Hill, NJ 07974 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 04期

关键词：

atomic layer deposition; depletion mode; GaAs MOSFET;

D O I：

10.1109/LED.2003.812144

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, a III-V compound semiconductor MOSFET with the gate dielectric grown by atomic layer deposition (ALD) is demonstrated. The novel application of the ALD process on III-V compound semiconductors affords tremendous functionality and opportunity by enabling the formation of high-quality gate oxides and passivation layers on III-V compound semiconductor devices. A 0.65-mum gate-length depletion-mode n-channel GaAs MOSFET with an Al2O3 gate oxide thickness of 160 Angstrom shows a gate leakage current density less than 10(-4) A/cm(2) and a maximum transconductance of 130 mS/mm, with negligible drain current drift and hysteresis. A short-circuit current-gain cut-off frequency f(T) of 14.0 GHz and a maximum oscillation frequency f(max) of 25.2 GHz have been achieved from a 0.65-mum gate-length device.

引用

页码：209 / 211

页数：3

共 21 条

[1] ALXGA1-XAS-GAAS METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FORMED BY LATERAL WATER-VAPOR OXIDATION OF ALAS [J].