Extended-type defects created by high temperature helium implantation into silicon

被引：7

作者：

Beaufort, MF

Donnelly, SE

Rousselet, S

David, ML

Barbot, JF

机构：

[1] Univ Poitiers, Met Phys Lab, UMR 6630, SP2M1, F-86962 Futuroscope, France

[2] Univ Salford, Mat Res Inst, Salford M5 4WT, Lancs, England

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 242卷 / 1-2期

关键词：

defects; ion implantation; helium; silicon; TEM;

D O I：

10.1016/j.nimb.2005.08.145

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Following helium implantation (50 keV, 5 x 10(16) cm(-2)) at 800 degrees C in silicon, only {113} defects are present spreading out beyond the maximum of the damage distribution. Both linear rod-like defects as well as so-called ribbon-like {113} defects are observed. During annealing at 800 degrees C the number of interstitials in ribbon-like defects appears to increase at the expense of the rod-like defects. After annealing at 1000 degrees C, only a row of dislocation loops is observed. These results suggest that the formation energy of the ribbon-like defects may be lower than that of the rod-like defects. (c) 2005 Elsevier B.V. All rights reserved.

引用

收藏

页码：565 / 567

页数：3

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