Bias-assisted H2 gas generation in HCl and KOH solutions using n-type GaN photoelectrode

被引：47

作者：

Fujii, K ^{[1
]}

Ohkawa, K ^{[1
]}

机构：

[1] Tokyo Univ Sci, Dept Appl Phys, Nakamura Inhomogeneous Crystal Project, Exploratory Res Adv Technol,Japan Sci & Technol A, Tokyo 1628601, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2006年 / 153卷 / 03期

关键词：

D O I：

10.1149/1.2161572

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We studied H-2 gas generation using a GaN photoelectrode in both HCl and KOH solutions. The photocurrent in KOH was larger than that in HCl under a small extra bias, and caused a more extensive H-2 generation at the beginning. GaN corrosion in HCl was less extended than that in KOH during photoelectrochemical reactions. The stability of the GaN photoelectrode in HCl was a result of H2O reduction and Cl- oxidation instead of water photoelectrolysis. (c) 2006 The Electrochemical Society.

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页码：A468 / A471

页数：4

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