Effects of donor doping on Ga1-xMnxAs

被引：14

作者：

Cho, Y. J. ^{[1
]}

Yu, K. M. ^{[2
]}

Liu, X. ^{[1
]}

Walukiewicz, W. ^{[2
]}

Furdyna, J. K. ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[2] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 26期

基金：

美国国家科学基金会;

关键词：

Curie temperature; ferromagnetic materials; gallium arsenide; hole mobility; III-V semiconductors; impurity states; magnetic semiconductors; magnetic thin films; manganese compounds; semiconductor doping; semiconductor thin films; wide band gap semiconductors;

D O I：

10.1063/1.3063046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the effect compensating Mn acceptors in Ga1-xMnxAs films by doping with Si donors. For Ga1-xMnxAs with low Mn content (e.g., x < 0.033), doping by Si decreases the Curie temperature T-C compared to undoped Ga1-xMnxAs. At high values of x, however (e.g., x>0.10), Si doping is found to increase T-C. We ascribe this to an increase in the hole mobility in high x samples due to changes in the relative occupancy of the hole impurity band associated with compensation by the Si donors.

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页数：3

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共 20 条

[1] Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing [J].

Alberi, K. ;

Yu, K. M. ;

Stone, P. R. ;

Dubon, O. D. ;

Walukiewicz, W. ;

Wojtowicz, T. ;

Liu, X. ;

Furdyna, J. K. .

PHYSICAL REVIEW B, 2008, 78 (07)

[2] Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs [J].

Blinowski, J ;

Kacman, P .

PHYSICAL REVIEW B, 2003, 67 (12) :4

[3] Impurity band conduction in a high temperature ferromagnetic semiconductor [J].

Burch, K. S. ;

Shrekenhamer, D. B. ;

Singley, E. J. ;

Stephens, J. ;

Sheu, B. L. ;

Kawakami, R. K. ;

Schiffer, P. ;

Samarth, N. ;

Awschalom, D. D. ;

Basov, D. N. .

PHYSICAL REVIEW LETTERS, 2006, 97 (08)

[4] Mn interstitial diffusion in (Ga,Mn)As [J].

Edmonds, KW ;

Boguslawski, P ;

Wang, KY ;

Campion, RP ;

Novikov, SN ;

Farley, NRS ;

Gallagher, BL ;

Foxon, CT ;

Sawicki, M ;

Dietl, T ;

Nardelli, MB ;

Bernholc, J .

PHYSICAL REVIEW LETTERS, 2004, 92 (03) :4

[5] NATIVE POINT-DEFECTS IN LOW-TEMPERATURE-GROWN GAAS [J].

LIU, X ;

PRASAD, A ;

NISHIO, J ;

WEBER, ER ;

LILIENTALWEBER, Z ;

WALUKIEWICZ, W .

APPLIED PHYSICS LETTERS, 1995, 67 (02) :279-281

[6] NONSTOICHIOMETRY AND DOPANTS RELATED PHENOMENA IN LOW-TEMPERATURE GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MISSOUS, M ;

OHAGAN, S .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (07) :3396-3401

[7] DILUTED MAGNETIC III-V SEMICONDUCTORS [J].

MUNEKATA, H ;

OHNO, H ;

VONMOLNAR, S ;

SEGMULLER, A ;

CHANG, LL ;

ESAKI, L .

PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1849-1852

[8] Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As [J].

Myers, R. C. ;

Sheu, B. L. ;

Jackson, A. W. ;

Gossard, A. C. ;

Schiffer, P. ;

Samarth, N. ;

Awschalom, D. D. .

PHYSICAL REVIEW B, 2006, 74 (15)

[9] Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs [J].

Potashnik, SJ ;

Ku, KC ;

Chun, SH ;

Berry, JJ ;

Samarth, N ;

Schiffer, P .

APPLIED PHYSICS LETTERS, 2001, 79 (10) :1495-1497

[10] Weak localization in Ga1-xMnxAs:: Evidence of impurity band transport [J].

Rokhinson, L. P. ;

Lyanda-Geller, Y. ;

Ge, Z. ;

Shen, S. ;

Liu, X. ;

Dobrowolska, M. ;

Furdyna, J. K. .

PHYSICAL REVIEW B, 2007, 76 (16)