Spin polarized tunneling in III-V-based heterostructures with a ferromagnetic MnAs thin film and GaAs:MnAs nanoclusters

被引：17

作者：

Hai, Pham Nam

Yokoyama, Masafumi

Ohya, Shinobu

Tanaka, Masaaki

机构：

[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Japan Sci & Technol Corp, Kawaguchi, Saitama 3320012, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 32卷 / 1-2期

基金：

日本科学技术振兴机构;

关键词：

spintronics magnetic tunnel junction; MnAs thin film; GaAs : MnAs nanoclusters;

D O I：

10.1016/j.physe.2005.12.082

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have successfully fabricated epitaxial single-crystal magnetic tunnel junctions (MTJs) consisting of magnetic electrodes (ferromagnetic MnAs and GaAs:MnAs granular material) and a AlAs/GaAs III-V tunnel barrier, grown by molecular-beam epitaxy on GaAs(0 0 1) substrates. Clear tunneling magnetoresistance (TMR) was observed from 7 K up to room temperature. The bias voltage V-half at which the TMR ratio is reduced by half is 1200 mV at 7K, which is surprisingly high and much higher than that (similar to 40 mV) of ferromagnetic semiconductor-based MTJs. This result shows that GaAs:MnAs nanoclusters can be used as a spin injecting source in semiconductor-based spintronics devices. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：416 / 418

页数：3

共 14 条

[1] Epitaxial ferromagnetic MnAs thin films grown on Si(001): The effect of substrate annealing [J].