Large tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions

被引：292

作者：

Tanaka, M ^{[1
]}

Higo, Y ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.87.026602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have observed very large tunneling magnetoresistance (TMR) in epitaxially grown Ga1-xMnxAs/AlAs/Ga1-xMnxAs ferromagnetic semiconductor tunnel junctions. Large TMR ratios more than 70% (maximum 75%) were obtained in junctions with a very thin (less than or equal to1.6 nm) AlAs tunnel barrier when the magnetic field was applied along the [100] axis in the film plane. The TMR was found to rapidly decrease with increasing barrier thickness, which is explained by calculations assuming that the parallel wave vector of carriers is conserved in tunneling.

引用

页码：1 / 026602

页数：4

共 16 条

[1] SPIN-ORBIT-SPLITTING IN CRYSTALLINE AND COMPOSITIONALLY DISORDERED SEMICONDUCTORS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1977, 16 (02) :790-796

[2] Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures [J].

Chiba, D ;

Akiba, N ;

Matsukura, F ;

Ohno, Y ;

Ohno, H .

APPLIED PHYSICS LETTERS, 2000, 77 (12) :1873-1875

[3] Tunneling spectroscopy and tunneling magnetoresistance in (GaMn)As ultrathin heterostructures [J].

Hayashi, T ;

Shimada, H ;

Shimizu, H ;

Tanaka, M .

JOURNAL OF CRYSTAL GROWTH, 1999, 201 :689-692

[4] Tunneling magnetoresistance of a GaMnAs-based double barrier ferromagnetic tunnel junction [J].

Hayashi, T ;

Tanaka, M ;

Asamitsu, A .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4673-4675

[5] Anisotropic tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions [J].

Higo, Y ;

Shimizu, H ;

Tanaka, M .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :6745-6747

[6] TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].

JULLIERE, M .

PHYSICS LETTERS A, 1975, 54 (03) :225-226

[7] Tight-binding theory of tunneling giant magnetoresistance [J].

Mathon, J .

PHYSICAL REVIEW B, 1997, 56 (18) :11810-11819

[8] GIANT MAGNETIC TUNNELING EFFECT IN FE/AL2O3/FE JUNCTION [J].

MIYAZAKI, T ;

TEZUKA, N .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1995, 139 (03) :L231-L234

[9] LARGE MAGNETORESISTANCE AT ROOM-TEMPERATURE IN FERROMAGNETIC THIN-FILM TUNNEL-JUNCTIONS [J].

MOODERA, JS ;

KINDER, LR ;

WONG, TM ;

MESERVEY, R .

PHYSICAL REVIEW LETTERS, 1995, 74 (16) :3273-3276

[10] Properties of ferromagnetic III-V semiconductors [J].

Ohno, H .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 200 (1-3) :110-129

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