Mixed amide-malonate compound of hafnium as a novel monomeric precursor for MOCVD of HfO2 thin films

被引：17

作者：

Milanov, A

Bhakta, R

Thomas, R

Ehrhart, P

Winter, M

Waser, R

Devi, A ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Lehrstuhl Anorgan Chem 2, Inorgan Mat Chem, D-44780 Bochum, Germany

[2] IFF Inst Festkorperforsch, D-52425 Julich, Germany

[3] CNI Ctr Nanoelect Syst Informat Technol, Forschungszentrum Julich, D-52425 Julich, Germany

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2006年 / 16卷 / 05期

关键词：

D O I：

10.1039/b509380e

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The concept of introducing malonates as chelating ligands in combination with metal amides has yielded a new class of compounds which enable growth Of HfO2 thin films at low deposition temperatures by liquid injection metalorganic chemical vapour deposition.

引用

收藏

页码：437 / 440

页数：4

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