Crystallite coalescence: A mechanism for intrinsic tensile stresses in thin films

被引:558
作者
Nix, WD [1 ]
Clemens, BM [1 ]
机构
[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
基金
美国国家科学基金会;
关键词
D O I
10.1557/JMR.1999.0468
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We examined the stress associated with crystallite coalescence during the initial stages of growth in thin polycrystalline films with island,growth morphology. As growing crystallites contacted each other at their bases, the side-walls zipped together until a balance was reached between the energy associated with eliminating surface area, creating a grain boundary and straining the film. Our estimate for the resulting strain depends only on interfacial free energies, elastic properties, and grain size and predicts large tensile stresses in agreement with experimental results. We also discuss possible stress relaxation mechanisms that can occur during film growth subsequent to the coalescence event.
引用
收藏
页码:3467 / 3473
页数:7
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