Solution processable organic field-effect transistors utilizing an α,α′-dihexylpentathiophene-based swivel cruciform

被引:116
作者
Zen, A
Bilge, A
Galbrecht, F
Alle, R
Meerholz, K
Grenzer, J
Neher, D
Scherf, U
Farrell, T
机构
[1] Univ Potsdam, Inst Phys, D-14469 Potsdam, Germany
[2] Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany
[3] Univ Cologne, Inst Phys Chem, D-50939 Cologne, Germany
[4] Berg Univ Wuppertal, D-42119 Wuppertal, Germany
关键词
D O I
10.1021/ja0573357
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A pentathiophene-based swivel cruciform, which allows rotation between the cruciform arms, was synthesized. Homogeneous microcrystalline films were processed from solution, and field-effect transistors utilizing this dimer gave hole mobilities up to 0.012 cm2/V·s. Copyright © 2006 American Chemical Society.
引用
收藏
页码:3914 / 3915
页数:2
相关论文
共 36 条
[31]   Increased mobility from regioregular poly(3-hexylthiophene) field-effect transistors [J].
Wang, GM ;
Swensen, J ;
Moses, D ;
Heeger, AJ .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :6137-6141
[32]   Organic thin-film transistors based on carbonyl-functionalized quaterthiophenes: High mobility N-channel semiconductors and ambipolar transport [J].
Yoon, MH ;
DiBenedetto, SA ;
Facchetti, A ;
Marks, TJ .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (05) :1348-1349
[33]   Effect of molecular weight on the structure and crystallinity of poly(3-hexylthiophene) [J].
Zen, A ;
Saphiannikova, M ;
Neher, D ;
Grenzer, J ;
Grigorian, S ;
Pietsch, U ;
Asawapirom, U ;
Janietz, S ;
Scherf, U ;
Lieberwirth, I ;
Wegner, G .
MACROMOLECULES, 2006, 39 (06) :2162-2171
[34]   Improving the performance of organic field effect transistor by optimizing the gate insulator surface [J].
Zen, A ;
Neher, D ;
Silmy, K ;
Holländer, A ;
Asawapirom, U ;
Scherf, U .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (6A) :3721-3727
[35]   Effect of molecular weight and annealing of poly (3-hexylthiophene)s on the performance of organic field-effect transistors [J].
Zen, A ;
Pflaum, J ;
Hirschmann, S ;
Zhuang, W ;
Jaiser, F ;
Asawapirom, U ;
Rabe, JP ;
Scherf, U ;
Neher, D .
ADVANCED FUNCTIONAL MATERIALS, 2004, 14 (08) :757-764
[36]  
Zen A, 2005, CHEM MATER, V17, P781, DOI 10.1021/cm040183c