Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application

被引：30

作者：

Chen, SY ^{[1
]}

Sun, CL

Chen, SB

Chin, A

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 17期

关键词：

D O I：

10.1063/1.1471937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the physical and electrical properties of Bi3.25La0.75Ti3O12 (BLT) thin films on Pt/Ti/SiO2/Si and on Al2O3(6 nm)/Si, which are used for one-transistor-one-capacitor and one-transistor ferroelectric memory, respectively. The BLT thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of 1.6 V at applied +/-10 V bias. However, the leakage current of BLT on Al2O3/Si at -100 kV/cm is two orders of magnitude lower than that on Pt. The comparable memory characteristics and much reduced leakage current of BLT on Al2O3/Si are the strong advantages as compared with BLT on Pt because it is directly related to switching energy and device scaling down. (C) 2002 American Institute of Physics.

引用

页码：3168 / 3170

页数：3

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