Giant magnetoresistance properties of patterned IrMn exchange biased spin valves

被引：12

作者：

Mao, SN ^{[1
]}

Giusti, J ^{[1
]}

Amin, N ^{[1
]}

Van ek, J ^{[1
]}

Murdock, E ^{[1
]}

机构：

[1] Seagate Recording Heads, Minneapolis, MN 55435 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 08期

关键词：

D O I：

10.1063/1.370278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Giant magnetoresistance (GMR) responses were studied in micron-sized IrMn pinned spin valve stripes. As the stripe height is decreased both the pinning field and free layer bias field increase while the GMR ratio stays almost constant. The free layer coercivity becomes zero for the shortest stripe while the pinned layer coercivity drops slightly at high aspect ratio. The pinned layer switching field is enhanced in the patterned films, indicating a strong magnetostatic coupling between the free and pinned layer that was further simulated micromagnetically. (C) 1999 American Institute of Physics. [S0021-8979(99)33808-1].

引用

页码：6112 / 6114

页数：3

共 13 条

[1] Magnetization switching behavior in nanostructured NiFe/Co/Cu/Co spin-valve [J].