Deposition of in-plane textured MgO on amorphous Si3N4 substrates by ion-beam-assisted deposition and comparisons with ion-beam-assisted deposited yttria-stabilized-zirconia

We report the growth of in-plane textured (100) MgO on amorphous Si3N4 substrates by ion beam assisted deposition (IBAD). The textured MgO can be used as a structural template for subsequent epitaxial thin film deposition. The results are compared with IBAD of (100) and (111) yttria-stabilized-zirconia (YSZ). Based on transmission electron microscopy (TEM) and in situ reflection high energy-electron diffraction (RHEED), we find that MgO texturing is a nucleation-controlled process and the alignment is a function of nuclei size and density. This differs greatly from the evolutionary-type texturing process observed for IBAD (100) YSZ. Consequently, we are able to make 100 Angstrom thick MgO films with 7 degrees in-plane alignment, whereas IBAD (100) YSZ films need to be thicker than 5000 Angstrom to achieve in-plane alignment better than 13 degrees. This has important implications for the economical application of TBAD induced alignment in real manufacturing processes, including high Tc superconductor (i.e., YBCO) coated tapes, photovoltaics, magnetic thin films, and semiconductor devices. (C) 1997 American Institute of Physics.