Deposition of Ta2O5/SiO2 multilayer films by a new process ''injection MOCVD''

被引：22

作者：

Felten, F

Senateur, JP

Labeau, M

YuZhang, K

Abrutis, A

机构：

[1] UNIV MARNE VALLEE,LAB RECONNAISSANCE MAT ENVIRONM,F-93166 NOISY LE GRAND,FRANCE

[2] VILNIUS STATE UNIV,DEPT GEN & INORGAN CHEM,LT-2724 VILNIUS,LITHUANIA

来源：

THIN SOLID FILMS | 1997年 / 296卷 / 1-2期

关键词：

injection MOCVD; multilayers; silicon dioxide; tantalum pentoxide;

D O I：

10.1016/S0040-6090(96)09351-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ta2O5 and SiO2 multilayer stacks have been deposited on silicon (100) substrate at 850 degrees C and 550 degrees C by a new process, which consists of injecting small and accurate quantities of precursor into an LPCVD reactor. Injections of the metalorganic precursors of tantalum and silicon have been achieved with two high speed electro-valves. AFM and TEM characterizations show that Ta2O5 thin film deposited at 850 degrees C has a very rough surface, whereas at 600 degrees C ii presents a smooth surface. From the TEM images of the multilayers, a similar behavior is observed. (C) 1997 Elsevier Science S.A.

引用

页码：79 / 81

页数：3

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