Epitaxial ZnO/Pt layered structures and ZnO-Pt nanodot composites on sapphire (0001)

被引：4

作者：

Chugh, Amit ^{[1
]}

Ramachandran, S. ^{[1
]}

Tiwari, A. ^{[1
]}

Narayan, J. ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, NSF Ctr Adv Mat & Smart Struct, Raleigh, NC 27695 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2006年 / 35卷 / 05期

关键词：

domain matching epitaxy; ZnO; Pt; nanodot composites;

D O I：

10.1007/BF02692537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the epitaxial growth and properties of ZnO-Pt layered structures and ZnO-Pt nanodot composites on sapphire (0001) substrates fabricated by using the pulsed laser deposition (PLD) technique. Heteroepitaxial growth of these structures was accomplished by using domain-matching epitaxy. The heterostructures were characterized using x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), optical transmittance, photoluminescence, and electrical resistivity measurements. XRD and HRTEM experiments revealed the epitaxial nature of these structures, with orientation relationship between ZnO and Pt, as [0001](ZnO)parallel to[111](Pt) and [(2) over bar 110](ZnO)parallel to[011](Pt), which is equivalent to no rotation between ZnO and Pt. For Pt epitaxy on (0001) sapphire, the epitaxial relationship was determined to be [001](Pt)parallel to[0001](Sap) and [110](Pt)parallel to[01 (1) over bar0](Sap) which is equivalent to a 30 degrees rotation in the basal plane. Electrical and optical measurements showed that these heterostructures exhibit very high electrical conductivity and at the same time possess interesting optical transmittance spectra and exhibit room temperature photoluminescence characteristics.

引用

页码：840 / 845

页数：6

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