Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus -: art. no. 012105

被引：40

作者：

Lopatiuk, O ^{[1
]}

Burdett, W

Chernyak, L

Ip, KP

Heo, YW

Norton, DP

Pearton, SJ

Hertog, B

Chow, PP

Osinsky, A

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] SVT Associates, Eden Prairie, MN 55344 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1844037

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Minority carrier diffusion length and lifetime in p-Zn0.9Mg0.1O doped with phosphorus were obtained from local electron beam irradiation measurements. The irradiation resulted in an increase of up to 25% in minority electron diffusion length from the initial value of similar to2.12 mum and in a simultaneous decrease of the peak near-bandedge cathodoluminescence intensity. The observed phenomena are attributed to charging of phosphorus-related deep acceptor level(s), which is consistent with the activation energy of 256+/-20 meV found for the effect of electron injection in Zn0.9Mg0.1O. (C) 2005 American Institute of Physics.

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页码：012105 / 1

页数：3

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