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Electron injection-induced effects in Mn-doped GaN

被引：12
作者：
Burdett, W [1 ]
Lopatiuk, O
Chernyak, L
Hermann, M
Stutzmann, M
Eickhoff, M
机构：
[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA
[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 06期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.1780606
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electron injection into Mn-doped GaN resulted in pronounced changes in the minority carrier diffusion length and cathodoluminescence. In particular, multiple-fold decrease of the band-to-band cathodoluminescence intensity was observed in the temperature between -50 and 80degreesC. This decrease was accompanied by an increase of the minority carrier diffusion length in the material, measured by electron-beam-induced current. Temperature-dependent cathodoluminescence measurements revealed a recovery of the cathodoluminescence intensity with an activation energy of 360 meV. (C) 2004 American Institute of Physics.
引用
收藏
页码：3556 / 3558
页数：3
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