The optical signature of electron injection in p-(Al)GaN

被引：10

作者：

Burdett, WC

Lopatiuk, O

Osinsky, A

Pearton, SJ

Chernyak, L ^{[1
]}

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] SVT Associates, Eden Prairie, MN 55344 USA

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2003年 / 34卷 / 1-2期

关键词：

III nitrides; GaN; electron injection; cathodoluminescence;

D O I：

10.1016/j.spmi.2004.02.019

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electron injection into p-type (Al)GaN leads to a considerable (several-fold) decrease of the cathodoluminescence intensity at room and elevated temperatures. Cathodoluminescence measurements revealed a slower intensity decrease with increasing sample temperature and allowed an estimate of the activation energy for the effect to be obtained (192-232 meV), which is consistent with the values for Mg-acceptor thermal ionization in (Al)GaN. The electron injection-induced decay of the sample's luminescence which persists for at least several days at similar to300 K is, therefore, attributed to an injected electron trapping on a Mg level in the (Al)GaN forbidden gap. (C) 2004 Elsevier Ltd. All rights reserved.

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页码：55 / 62

页数：8

相关论文

共 15 条

[1] Electron beam and optical depth profiling of quasibulk GaN [J].

Chernyak, L ;

Osinsky, A ;

Nootz, G ;

Schulte, A ;

Jasinski, J ;

Benamara, M ;

Liliental-Weber, Z ;

Look, DC ;

Molnar, RJ .

APPLIED PHYSICS LETTERS, 2000, 77 (17) :2695-2697

[2] Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices [J].

Chernyak, L ;

Osinsky, A ;

Fuflyigin, V ;

Schubert, EF .

APPLIED PHYSICS LETTERS, 2000, 77 (06) :875-877

[3] Cathodoluminescence studies of the electron injection-induced effects in GaN [J].

Chernyak, L ;

Burdett, W ;

Klimov, M ;

Osinsky, A .

APPLIED PHYSICS LETTERS, 2003, 82 (21) :3680-3682

[4] Study of temperature dependence for the electron injection-induced effects in GaN [J].

Chernyak, L ;

Burdett, W ;

Osinsky, A .

APPLIED PHYSICS LETTERS, 2002, 81 (09) :1633-1635

[5] Minority carrier transport in GaN and related materials [J].

Chernyak, L ;

Osinsky, A ;

Schulte, A .

SOLID-STATE ELECTRONICS, 2001, 45 (09) :1687-1702

[6] Enhancement of minority carrier transport in forward biased GaN p-n junction [J].

Chernyak, L ;

Nootz, G ;

Osinsky, A .

ELECTRONICS LETTERS, 2001, 37 (14) :922-923

[7] NUMERICAL-ANALYSIS OF THE TEMPERATURE-DEPENDENCE OF EBIC AND CL CONTRASTS [J].

ECKSTEIN, M ;

HABERMEIER, HU .

JOURNAL DE PHYSIQUE IV, 1991, 1 (C6) :23-28

[8] Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN [J].

Gelhausen, O ;

Klein, HN ;

Phillips, MR ;

Goldys, EM .

APPLIED PHYSICS LETTERS, 2002, 81 (20) :3747-3749

[9] Hall-effect characterization of III-V nitride semiconductors for high efficiency light emitting diodes [J].

Götz, W ;

Kern, RS ;

Chen, CH ;

Liu, H ;

Steigerwald, DA ;

Fletcher, RM .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3) :211-217

[10] Metastability and persistent photoconductivity in Mg-doped p-type GaN [J].

Johnson, C ;

Lin, JY ;

Jiang, HX ;

Khan, MA ;

Sun, CJ .

APPLIED PHYSICS LETTERS, 1996, 68 (13) :1808-1810