Study of temperature dependence for the electron injection-induced effects in GaN

被引：6

作者：

Chernyak, L ^{[1
]}

Burdett, W

Osinsky, A

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] Corning Inc, Corning, NY 14831 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 09期

关键词：

D O I：

10.1063/1.1503407

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron-beam injection-induced increase of minority carrier diffusion length in p-type GaN was studied as a function of sample temperature ranging from 25 degreesC to 130 degreesC. It was found that the rate for diffusion length increase exponentially decays with increasing temperature. This decay was attributed to a temperature-activated release of electron-beam injected electrons trapped on Mg levels. The activation energy of these levels was found to be similar to178 meV. This is in good agreement with the previously reported position for Mg levels in the GaN band gap. (C) 2002 American Institute of Physics.

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页码：1633 / 1635

页数：3

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