Influence of electron injection on performance of GaN photodetectors

被引：19

作者：

Chernyak, L ^{[1
]}

Schulte, A

Osinsky, A

Graff, J

Schubert, EF

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] Corning Appl Technol, Woburn, MA 01801 USA

[3] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 06期

关键词：

D O I：

10.1063/1.1448382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is demonstrated that short-time (up to 1200 s) electron injection into the p-region of GaN p-n junction, as a result of forward bias application, leads to a long-term multifold enhancement of the device peak responsivity as well as to a spectral broadening of the photoresponse. The effect is found to persist for several days and is related to an increased minority carrier diffusion length in the p region, due to an injected electron trapping on deep levels associated with Mg acceptors. (C) 2002 American Institute of Physics.

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页码：926 / 928

页数：3

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共 11 条

[1] Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices [J].

Chernyak, L ;

Osinsky, A ;

Fuflyigin, V ;

Schubert, EF .

APPLIED PHYSICS LETTERS, 2000, 77 (06) :875-877

[2] Electron beam induced current measurements of minority carrier diffusion length in gallium nitride [J].

Chernyak, L ;

Osinsky, A ;

Temkin, H ;

Yang, JW ;

Chen, Q ;

Khan, MA .

APPLIED PHYSICS LETTERS, 1996, 69 (17) :2531-2533

[3] Minority carrier transport in GaN and related materials [J].

Chernyak, L ;

Osinsky, A ;

Schulte, A .

SOLID-STATE ELECTRONICS, 2001, 45 (09) :1687-1702

[4] Enhancement of minority carrier transport in forward biased GaN p-n junction [J].

Chernyak, L ;

Nootz, G ;

Osinsky, A .

ELECTRONICS LETTERS, 2001, 37 (14) :922-923

[5] Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy [J].

Florescu, DI ;

Asnin, VM ;

Pollak, FH ;

Jones, AM ;

Ramer, JC ;

Schurman, MJ ;

Ferguson, I .

APPLIED PHYSICS LETTERS, 2000, 77 (10) :1464-1466

[6] Back illuminated AlGaN solar-blind photodetectors [J].

Lambert, DJH ;

Wong, MM ;

Chowdhury, U ;

Collins, C ;

Li, T ;

Kwon, HK ;

Shelton, BS ;

Zhu, TG ;

Campbell, JC ;

Dupuis, RD .

APPLIED PHYSICS LETTERS, 2000, 77 (12) :1900-1902

[7] Improved ultraviolet quantum efficiency using a semitransparent recessed window AlGaN/GaN heterojunction p-i-n photodiode [J].

Li, T ;

Beck, AL ;

Collins, C ;

Dupuis, RD ;

Campbell, JC ;

Carrano, JC ;

Schurman, MJ ;

Ferguson, IA .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2421-2423

[8] HIGHLY P-TYPED MG-DOPED GAN FILMS GROWN WITH GAN BUFFER LAYERS [J].

NAKAMURA, S ;

SENOH, M ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A) :L1708-L1711

[9] GaN: Processing, defects, and devices [J].

Pearton, SJ ;

Zolper, JC ;

Shul, RJ ;

Ren, F .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :1-78

[10] Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy [J].

VanHove, JM ;

Hickman, R ;

Klaassen, JJ ;

Chow, PP ;

Ruden, PP .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2282-2284