Electro-optic anisotropy of epitaxially grown (Pb,La)(Zr,Ti)O3 films fabricated by modified sol-gel process

被引：6

作者：

Echizen, Masahiro ^{[1
]}

Fujii, Takeshi ^{[1
]}

Nozaka, Takashi ^{[1
]}

Nishida, Takashi ^{[1
]}

Takeda, Hiroaki ^{[1
]}

Uchiyama, Kiyoshi ^{[1
]}

Shiosaki, Tadashi ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 09期

关键词：

PLZT; thin film; epitaxial relation; electro-optic effect; anisotropy;

D O I：

10.1143/JJAP.47.7545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly-quality epitaxially grown (Pb,La)(Zr,Ti)O-3 (PLTZ) flms were successfully fabricated on single-crystalline sapphire (012) substrates using a modified sol-gel process. The crystallographic relationship between the PLZT film and the sapphire substrate, and the detailed electro-optic (EO) properties of the films were investigated. Large linear EO coefficients,. as large as 5 10 pm/V. were obtained when an electric field was, applied at 145 angle to the PLZT {110}. In turn, smaller EO coefficients were obtained when an electric field was applied at 0 degrees and 90 degrees angles to PLZT {110}. A strong EO anisotropy was observed according to the configuration of the input light polarization and the applied electric field.

引用

页码：7545 / 7548

页数：4

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