Highly stable a-Si:H films deposited by using multi-hollow plasma chemical vapor deposition

被引：50

作者：

Koga, K ^{[1
]}

Inoue, T ^{[1
]}

Bando, K ^{[1
]}

Iwashita, S ^{[1
]}

Shiratani, M ^{[1
]}

Watanabe, Y ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect, Fukuoka 8128581, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 46-49期

关键词：

hydrogenated amorphous silicon films; light-induced degradation; Staebler-Wronski effects; plasma CVD; clusters; defect density;

D O I：

10.1143/JJAP.44.L1430

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon (a-Si:H) films of high stability against light exposure have been deposited by using a newly developed multi-hollow plasma chemical vapor deposition (CVD) method. Films deposited in the upstream region in the multi-hollow plasma CVD reactor are a-Si:H films without incorporating a-Si:H nano-particles (clusters), while those in the downstream region are a-Si:H films with incorporating clusters. A-Si:H films without clusters have a low initial defect density of 5 x 10(15) cm(-3) and keep the value even after 100 h exposure of intense light intensity of 240 mW/cm(2), whereas a-Si:H films with clusters show a significant increase in defect density from its initial value of 5 x 10(15) cm(-3) to 2 x 10(16) cm(-3) after 100 h light exposure. These results indicate that suppression of clusters incorporated into films is the key to realizing highly stable a-Si:H films.

引用

页码：L1430 / L1432

页数：3

共 11 条

[1]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[2] Cluster-eliminating filter for depositing cluster-free a-Si:H films by plasma chemical vapor deposition -: art. no. 113501 [J].