Surface segregation of bulk oxygen on oxidation of epitaxially grown Nb-doped SrTiO3 on SrTiO3(001)

被引：29

作者：

Chen, F

Zhao, T

Fei, YY

Lu, HB

Chen, ZH

Yang, GZ

Zhu, XD

机构：

[1] Chinese Acad Sci, Inst Phys, Lab Opt Phys, Beijing 100080, Peoples R China

[2] Univ Calif Davis, Dept Phys, Davis, CA 95616 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 16期

关键词：

D O I：

10.1063/1.1473694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the epitaxy of 10 mol % Nb:SrTiO3 on a SrTiO3(100) substrate under an interrupted pulsed-laser-deposition condition. By monitoring the recovery behaviors of reflection high-energy electron diffraction intensity and an optical reflectance difference signal from the growth surface, we observed that, at temperatures above 630 degreesC, the oxidation of an as-deposited Nb:SrTiO3 monolayer was achieved by the diffusion of oxygen vacancies in the monolayer into the substrate. (C) 2002 American Institute of Physics.

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页码：2889 / 2891

页数：3

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