Observation of persistent photoconductance in single ZnO nanotube

被引：25

作者：

Liu, Peng ^{[1
]}

She, Guangwei ^{[2
]}

Liao, Zhaoliang ^{[1
]}

Wang, Yao ^{[2
]}

Wang, Zhenzhong ^{[1
]}

Shi, Wensheng ^{[2
]}

Zhang, Xiaohong ^{[2
]}

Lee, Shuit-Tong ^{[2
,3
,4
]}

Chen, Dongmin ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Tech Inst Phys & Chem, Lab Organ Optoelect Funct Mat & Mol Engn, Beijing 100080, Peoples R China

[3] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

[4] City Univ Hong Kong, Ctr Super Diamond & Adv Films COSDAF, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 06期

基金：

中国国家自然科学基金;

关键词：

defect states; II-VI semiconductors; ionisation; photoconductivity; semiconductor nanotubes; valence bands; wide band gap semiconductors; zinc compounds;

D O I：

10.1063/1.3082173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vertically aligned ZnO nanotube fabricated on an indium tin oxide substrate is found to exhibit strong persistent photoconductivity (PPC). Excitation wavelength-dependent conductance measurement on individual ZnO nanotube reveals the presence of defect states at 240 meV above the valence band edge, which are directly associated with the PPC effect. Our observations are consistent with the hypothesis that double ionization of defect-localized states is responsible for the PPC effect.

引用

页数：3

共 10 条

[1] Annealing effect on the luminescent properties and native defects of ZnO [J].