Bandgap energy tuning of electrochemically grown ZnO thin films by thickness and electrodeposition potential

被引:224
作者
Marotti, RE
Guerra, DN
Bello, C
Machado, G
Dalchiele, EA
机构
[1] Univ Republica, Fac Ingn, Inst Fis, Montevideo 11000, Uruguay
[2] Univ Republica, Fac Ciencias, UCIC, Montevideo 11400, Uruguay
关键词
semiconductors; electrodeposition; reflectance; bandgap energy;
D O I
10.1016/j.solmat.2004.01.008
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
ZnO thin films were electrochemically deposited onto opaque and transparent substrates (copper and ITO). The electrolyte consisted of a 0.1 M Zn(NO3)(2) solution with the initial pH adjusted to 6.0, different electrodeposition potentials from E = -700 to - 1200 mV (saturated calomel electrode, SCE). The resulting samples have the structural, chemical and morphological properties of hexagonal ZnO, with thickness varying from less than 1 pm to almost 30 pm. The bandgap energy varies inversely with film thickness, ranging from less than 3.1 to 3.4 eV. The bandgap also depends on the electrodeposition potential. This result allows to adjust the desired absorption edge within a 30nm wide region in the UV. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:85 / 103
页数:19
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