Potential shielding by the surface water layer in Kelvin probe force microscopy

被引:165
作者
Sugimura, H
Ishida, Y
Hayashi, K
Takai, O
Nakagiri, N
机构
[1] Nagoya Univ, Grad Sch Engn, Dept Mat Proc Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[2] Nikon Co, Core Technol Ctr, Shinagawa Ku, Tokyo 1408601, Japan
关键词
Hydrophilicity - Surface waters - Hydrophobicity - Shielding - Probes;
D O I
10.1063/1.1455145
中图分类号
O59 [应用物理学];
学科分类号
摘要
Kelvin probe force microscopy (KFM) was applied to two-dimensional profiling of silicon pn-structures covered with a 2 nm-thick oxide layer. The surface potential contrast between the p-and n-type regions depended on the hydrophobicity of the oxide surface when KFM imaging was conducted in air with a relative humidity of more than 50%. By decreasing the density of surface hydroxyl groups on the oxide layer through thermal annealing, the potential contrast between the p- and n-type regions increased. While there was no detectable contrast on samples covered with hydrophilic oxide with a water contact angle of almost 0degrees, contrast increased to greater than 50 mV on the samples covered with hydrophobic oxide with a water contact angle of about 80degrees. However, when KFM imaging was conducted in a dry nitrogen atmosphere with relative humidity less than 0.6%, a clear potential contrast of about 50 mV could be acquired even on samples covered with the hydrophilic oxide layer. Since samples with less adsorbed water on their surface showed greater potential contrast, contrast degradation is attributed to a shielding effect of the adsorbed water layer. (C) 2002 American Institute of Physics.
引用
收藏
页码:1459 / 1461
页数:3
相关论文
共 14 条
[1]  
[Anonymous], 1997, J PHOTOPOLYM SCI TEC
[2]   Formation of dipole-oriented water films on mica substrates at ambient conditions [J].
Bluhm, H ;
Inoue, T ;
Salmeron, M .
SURFACE SCIENCE, 2000, 462 (1-3) :L599-L602
[3]   Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy [J].
De Wolf, P ;
Stephenson, R ;
Trenkler, T ;
Clarysse, T ;
Hantschel, T ;
Vandevorst, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01) :361-368
[4]   VACUUM-ULTRAVIOLET-INDUCED OXIDATION OF POLYETHYLENE [J].
HOLLANDER, A ;
KLEMBERGSAPIEHA, JE ;
WERTHEIMER, MR .
MACROMOLECULES, 1994, 27 (10) :2893-2895
[5]   Fluoroalkylsilane monolayers formed by chemical vapor surface modification on hydroxylated oxide surfaces [J].
Hozumi, A ;
Ushiyama, K ;
Sugimura, H ;
Takai, O .
LANGMUIR, 1999, 15 (22) :7600-7604
[6]   LOW-TEMPERATURE GROWTH OF SIO2 THIN-FILM BY DOUBLE-EXCITATION PHOTO-CVD [J].
INOUE, K ;
MICHIMORI, M ;
OKUYAMA, M ;
HAMAKAWA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (06) :805-811
[7]   SILICON PN JUNCTION IMAGING AND CHARACTERIZATIONS USING SENSITIVITY ENHANCED KELVIN PROBE FORCE MICROSCOPY [J].
KIKUKAWA, A ;
HOSAKA, S ;
IMURA, R .
APPLIED PHYSICS LETTERS, 1995, 66 (25) :3510-3512
[8]   Application of scanning capacitance microscopy to semiconductor devices [J].
Nakagiri, N ;
Yamamoto, T ;
Sugimura, H ;
Suzuki, Y ;
Miyashita, M ;
Watanabe, S .
NANOTECHNOLOGY, 1997, 8 :A32-A37
[9]   KELVIN PROBE FORCE MICROSCOPY [J].
NONNENMACHER, M ;
OBOYLE, MP ;
WICKRAMASINGHE, HK .
APPLIED PHYSICS LETTERS, 1991, 58 (25) :2921-2923
[10]   Kelvin probe force microscopy on InAs thin films grown on GaAs giant step structures formed on (110) GaAs vicinal substrates [J].
Ono, S ;
Takeuchi, M ;
Takahashi, T .
APPLIED PHYSICS LETTERS, 2001, 78 (08) :1086-1088