Ionic transport in anodically oxidized Al/W layers

被引:21
作者
Iglesias-Rubianes, L [1 ]
Skeldon, P
Thompson, GE
Habazaki, H
Shimizu, K
机构
[1] Univ Manchester, Inst Sci & Technol, Ctr Corros & Protect, Manchester M60 1QD, Lancs, England
[2] Hokkaido Univ, Grad Engn Sch, Sapporo, Hokkaido 0608628, Japan
[3] Keio Univ, Univ Chem Lab, Yokohama, Kanagawa 223, Japan
关键词
D O I
10.1149/1.1430228
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The growth of an anodic oxide film on a specimen consisting of a layer of aluminum deposited upon a layer of tungsten was examined by transmission electron microscopy. The findings reveal initial growth of anodic alumina, followed by penetration of the alumina by fingers of tungsten oxide once the metal/film interface reaches the tungsten layer. The fingers are approximately cylindrical or lanceolate, with width in the range 1-15 nm and aspect ratios up to about 40. The current flows preferentially to regions of tungsten oxide rather than the alumina due to the lower electric field for growth of the former oxide. The penetration of the alumina is assisted by the relatively high Pilling-Bedworth ratio for W/WO3 and the inherent plasticity in amorphous anodic oxides. The tungsten oxide of the fingers appears to be of higher density than that formed at the metal/film interface after the aluminum has been fully oxidized, which may be due to the penetration of the alumina layer by a displacement process. (C) 2001 The Electrochemical Society.
引用
收藏
页码:B23 / B26
页数:4
相关论文
共 21 条
[1]   STRUCTURE AND STOICHIOMETRY OF ANODIC FILMS ON V, NB, TA, MO AND W [J].
ARORA, MR ;
KELLY, R .
JOURNAL OF MATERIALS SCIENCE, 1977, 12 (08) :1673-1684
[2]   USE OF RUTHERFORD BACKSCATTERING TO STUDY BEHAVIOR OF ION-IMPLANTED ATOMS DURING ANODIC-OXIDATION OF ALUMINUM - AR, KR, XE, K, RB, CS, CL, BR, AND I [J].
BROWN, F ;
MACKINTOSH, WD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) :1096-1102
[3]   MIGRATION OF METAL AND OXYGEN DURING ANODIC FILM FORMATION [J].
DAVIES, JA ;
DOMEIJ, B ;
PRINGLE, JPS ;
BROWN, F .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (07) :675-&
[4]   MECHANISMS OF PASSIVITY OF NONEQUILIBRIUM AL-W ALLOYS [J].
DAVIS, GD ;
SHAW, BA ;
REES, BJ ;
FERRY, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (04) :951-959
[5]   KINETICS OF GROWTH OF AMORPHOUS WO3 ANODIC FILMS ON TUNGSTEN [J].
DIQUARTO, F ;
DIPAOLA, A ;
SUNSERI, C .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (05) :1016-1021
[6]   The incorporation of metal ions into anodic films on aluminium alloys [J].
Habazaki, H ;
Shimizu, K ;
Skeldon, P ;
Thompson, GE ;
Wood, GC .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1996, 73 (03) :445-460
[7]   ANODIC FILM FORMATION ON A SPUTTER-DEPOSITED AL-30 AT-PERCENT-MO ALLOY [J].
HABAZAKI, H ;
SKELDON, P ;
SHIMIZU, K ;
THOMPSON, GE ;
WOOD, GC .
CORROSION SCIENCE, 1995, 37 (09) :1497-1509
[8]   HIGH RESISTANCE ANODIC OXIDE FILMS ON ALUMINIUM [J].
HARKNESS, AC ;
YOUNG, L .
CANADIAN JOURNAL OF CHEMISTRY, 1966, 44 (20) :2409-&
[9]   Influence of current density in anodizing of an Al-W alloy [J].
Iglesias-Rubianes, L ;
Skeldon, P ;
Thompson, GE ;
Shimizu, K ;
Habazaki, H .
CORROSION SCIENCE, 2001, 43 (12) :2217-2227
[10]   STUDY OF THE ANODIZATION OF NIOBIUM AND TANTALUM SUPERIMPOSED LAYERS BY O-18 TRACING TECHNIQUES AND NUCLEAR MICROANALYSIS .1. O-18 AND CATION DEPTH PROFILES [J].
PERRIERE, J ;
SIEJKA, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) :1260-1267