Remote hydrogen plasma doping of single crystal ZnO

被引：122

作者：

Strzhemechny, YM ^{[1
]}

Mosbacker, HL

Look, DC

Reynolds, DC

Litton, CW

Garces, NY

Giles, NC

Halliburton, LE

Niki, S

Brillson, LJ

机构：

[1] Ohio State Univ, Ctr Mat Res, Columbus, OH 43210 USA

[2] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[3] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[4] USAF, Res Lab, AFRL MLPS, Wright Patterson AFB, OH 45435 USA

[5] W Virginia Univ, Dept Phys, Morgantown, WV 26506 USA

[6] AIST, Tsukuba, Ibaraki 3058568, Japan

[7] Ohio State Univ, Dept Elect Engn, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 14期

关键词：

D O I：

10.1063/1.1695440

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that remote plasma hydrogenation can increase electron concentrations in ZnO single crystals by more than an order of magnitude. We investigated the effects of this treatment on Hall concentration and mobility as well as on the bound exciton emission peak I-4 for a variety of ZnO single crystals-bulk air annealed, Li doped, and epitaxially grown on sapphire. Hydrogen increases I-4 intensity in conducting samples annealed at 500 and 600 degreesC and partially restores emission in the I-4 range for Li-diffused ZnO. Hydrogenation increases carrier concentration significantly for the semi-insulating Li doped and epitaxial thin film samples. These results indicate a strong link between the incorporation of hydrogen, increased donor-bound exciton PL emission, and increased n-type conductivity. (C) 2004 American Institute of Physics.

引用

页码：2545 / 2547

页数：3

共 29 条

[1] Highly textured and conductive undoped ZnO film using hydrogen post-treatment [J].

Baik, SJ ;

Jang, JH ;

Lee, CH ;

Cho, WY ;

Lim, KS .

APPLIED PHYSICS LETTERS, 1997, 70 (26) :3516-3518

[2] Shallow versus deep hydrogen states in ZnO and HgO [J].

Cox, SFJ ;

Davis, EA ;

King, PJC ;

Gil, JM ;

Alberto, HV ;

Vilao, RC ;

Duarte, JP ;

de Campos, NA ;

Lichti, RL .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (40) :9001-9010

[3] Experimental confirmation of the predicted shallow donor hydrogen state in zinc oxide [J].

Cox, SFJ ;

Davis, EA ;

Cottrell, SP ;

King, PJC ;

Lord, JS ;

Gil, JM ;

Alberto, HV ;

Vilao, RC ;

Duarte, JP ;

de Campos, NA ;

Weidinger, A ;

Lichti, RL ;

Irvine, SJC .

PHYSICAL REVIEW LETTERS, 2001, 86 (12) :2601-2604

[4] Hydrogen: A relevant shallow donor in zinc oxide [J].

Hofmann, DM ;

Hofstaetter, A ;

Leiter, F ;

Zhou, HJ ;

Henecker, F ;

Meyer, BK ;

Orlinskii, SB ;

Schmidt, J ;

Baranov, PG .

PHYSICAL REVIEW LETTERS, 2002, 88 (04) :4

[5] Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE [J].

Iwata, K ;

Fons, P ;

Yamada, A ;

Matsubara, K ;

Niki, S .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) :526-531

[6] ENHANCED CONDUCTIVITY OF ZINC-OXIDE THIN-FILMS BY ION-IMPLANTATION OF HYDROGEN-ATOMS [J].

KOHIKI, S ;

NISHITANI, M ;

WADA, T ;

HIRAO, T .

APPLIED PHYSICS LETTERS, 1994, 64 (21) :2876-2878

[7]

Lavrov EV, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.165205

[8] Electrical properties of bulk ZnO [J].

Look, DC ;

Reynolds, DC ;

Sizelove, JR ;

Jones, RL ;

Litton, CW ;

Cantwell, G ;

Harsch, WC .

SOLID STATE COMMUNICATIONS, 1998, 105 (06) :399-401

[9] Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy [J].

Look, DC ;

Reynolds, DC ;

Litton, CW ;

Jones, RL ;

Eason, DB ;

Cantwell, G .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1830-1832

[10] The path to ZnO devices: donor and acceptor dynamics [J].

Look, DC ;

Jones, RL ;

Sizelove, JR ;

Garces, NY ;

Giles, NC ;

Halliburton, LE .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 195 (01) :171-177

← 1 2 3 →