Surface reconstructions of InGaAs alloys

被引：34

作者：

Bone, PA

Ripalda, JM

Bell, GR

Jones, TS ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, Ctr Elect Mat & Devices, London SW7 2AZ, England

[2] CSIC, Inst Microelectron Madrid, E-28760 Tres Cantos, Spain

[3] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

SURFACE SCIENCE | 2006年 / 600卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

molecular beam epitaxy; surface reconstructions; surface alloys; indium gallium arsenide; scanning tunnelling microscopy; electron diffraction;

D O I：

10.1016/j.susc.2005.12.015

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface reconstructions of InxGa1-xAs alloys grown by molecular beam epitaxy on the (001) surfaces of GaAs and InAs have been studied by reflection high-energy electron diffraction and scanning tunnelling microscopy. A surface phase diagram is presented for the nominally strain-free alloy as a function of substrate temperature and alloy composition, and structural models for the commonly observed 3x reconstructions are discussed. Two new, electronically stable structural models are described that account for the transition of the InxGa1-xAs surface alloy from a c(4 x 4) to an asymmetric 3x reconstruction and that are fully consistent with all current experimental evidence. (c) 2005 Elsevier B.V. All rights reserved.

引用

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页码：973 / 982

页数：10

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