Structure of III-Sb(001) growth surfaces: The role of heterodimers

被引：64

作者：

Barvosa-Carter, W

Bracker, AS

Culbertson, JC

Nosho, BZ

Shanabrook, BV

Whitman, LJ

Kim, H

Modine, NA

Kaxiras, E

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Harvard Univ, Cambridge, MA 02138 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.84.4649

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have determined the structure of AlSb and GaSb (001) surfaces prepared by molecular beam epitaxy under typical Sb-rich device growth conditions. Within the range of flux and temperature where the diffraction pattern is nominally (1 x 3), we find that there are actually three distinct, stable (4 x 3) surface reconstructions. The three structures differ from any previously proposed for these growth conditions, with two of the reconstructions incorporating mixed III-V dimers within the Sb surface layer. These heterodimers appear to play an important role in island nucleation and growth.

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页码：4649 / 4652

页数：4

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