Influences of synthesizing temperatures on the properties of Cu2ZnSnS4 prepared by sol-gel spin-coated deposition

被引:97
作者
Yeh, Min Yen [1 ]
Lee, Chin Cheng [2 ]
Wuu, Dong Sing [3 ]
机构
[1] Natl Kaohsiung Marine Univ, Dept Microelect Engn, Kaohsiung 811, Taiwan
[2] Natl Kaohsiung Marine Univ, Inst Ocean Engn & Technol, Kaohsiung 811, Taiwan
[3] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 402, Taiwan
关键词
Cu2ZnSnS4; Absorption layer; Solar cells; Sol-gel spin-coated deposition; THIN-FILMS; OPTICAL-PROPERTIES; STANNITE; PRECURSORS;
D O I
10.1007/s10971-009-1997-z
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work Cu2ZnSnS4 (CZTS) suitable for the absorption layer in solar cells was successfully prepared by sol-gel spin-coated deposition. CZTS precursors were prepared by using solutions of copper (II) chloride, zinc (II) chloride, tin (IV) chloride, and thiourea. Texture structures with kesterite crystallinity reflected from the X-ray diffraction of (112), (200), and (312) planes of the CZTS were obtained as synthesized at a temperature of over 240 A degrees C. The absorption coefficients of the CZTS films are higher than 10(4) cm(-1), and the optical-energy gap is about 1.5 eV. Without sulfurization treatment, a near stoichiometry composition of the CZTS is obtained at a synthesizing temperature of 280 A degrees C.
引用
收藏
页码:65 / 68
页数:4
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