Plasma diagnostics in inductively coupled plasma etching using Cl2/Xe

被引：15

作者：

Matsutani, A

Ohtsuki, H

Koyama, F

Iga, K

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Samco Int Inc, Fujimi Ku, Kyoto 6128443, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 3A期

关键词：

dry etching; inductively coupled plasma (ICP); mass spectrometry; ion energy distribution; InP; Cl-2/Xe;

D O I：

10.1143/JJAP.39.1435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the plasma characteristics in an inductively coupled plasma (ICP) etching process using Cl-2/Xe by means of a quadrupole mass spectrometer equipped with an ion energy analyzer. It was found that the ion energy of Cl+ increased with decreasing etching pressure, and the quantity of Cl+ increased with decreasing Clz flow rate. Ions including etching products such as Si+, Cl+, Xe+ and SiClx+ were observed in the etching plasma. It is suggested from the results of this experiment that the etching profile can be controlled by the in situ monitoring of the quantity of Cl+ ions.

引用

页码：1435 / 1436

页数：2

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