Plasma characterization in chlorine-based reactive ion beam etching and chemically assisted ion beam etching

被引：9

作者：

Matsutani, A ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 5A期

关键词：

reactive ion beam etching; chemically assisted ion beam etching; appearance mass spectrometry; ion energy;

D O I：

10.1143/JJAP.37.2747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2747 / 2751

页数：5

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