Mechanism of erbium electroluminescence in hydrogenated amorphous silicon

被引：4

作者：

Bresler, MS ^{[1
]}

Gusev, OB ^{[1
]}

Pak, PE ^{[1
]}

Terukov, EI ^{[1
]}

Tséndin, KD ^{[1
]}

Yassievich, IN ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 06期

关键词：

D O I：

10.1134/1.1187741

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The mechanism of the electroluminescence of erbium under a reverse bias in structures based on hydrogenated amorphous silicon is studied. Erbium ions are excited through an Auger process, in which conduction electrons are trapped by neutral dangling bonds (D-0 centers) located near the erbium ions. A stationary current through the structure is sustained by a reverse process involving the thermally stimulated tunneling emission of electrons by negatively charged dangling-bond defects (D- centers) into the conduction band of the amorphous matrix. (C) 1999 American Institute of Physics. [S1063-7826(99)00906-0].

引用

页码：622 / 623

页数：2

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