Room-temperature electroluminescence of erbium-doped amorphous hydrogenated silicon

被引：34

作者：

Gusev, OB ^{[1
]}

Kuznetsov, AN ^{[1
]}

Terukov, EI ^{[1
]}

Bresler, MS ^{[1
]}

Kudoyarova, VK ^{[1
]}

Yassievich, IN ^{[1
]}

Zakharchenya, BP ^{[1
]}

Fuhs, W ^{[1
]}

机构：

[1] HAHN MEITNER INST BERLIN GMBH,ABT PHOTOVOLTA,D-12489 BERLIN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 02期

关键词：

D O I：

10.1063/1.118377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed strong room-temperature electroluminescence at 1.54 mu m induced by erbium ions in amorphous hydrogenated silicon (a-Si:H). The device consisted of an Al/a-Si:H(Er)/n-c-Si/Al structure. A mechanism for electronic excitation of the erbium ions in the amorphous matrix is proposed that is based on defect-related Auger excitation. (C) 1997 American Institute of Physics.

引用

页码：240 / 242

页数：3

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