Inverter made of complementary p and n channel transistors using a single directly deposited microcrystalline silicon film

被引：64

作者：

Chen, Y ^{[1
]}

Wagner, S

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Princeton Univ, Ctr Photon & Optoelect Mat, Princeton, NJ 08544 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 08期

关键词：

D O I：

10.1063/1.124617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a p channel thin-film transistor (TFT) made of directly deposited microcrystalline silicon (mu c-Si). By integrating this p TFT with its n channel counterpart on a single mu c-Si film, we fabricated a complementary metal-silicon oxide-silicon (CMOS) inverter of deposited mu c-Si. The mu c-Si channel material was grown at 320 degrees C by plasma-enhanced chemical vapor deposition in a process similar to the deposition of hydrogenated amorphous silicon. The highest postdeposition TFT process temperature was 280 degrees C. The low-temperature p channel mu c-Si TFT and the integrated CMOS inverter represent building blocks of a digital circuit technology based on ultralow-temperature silicon. (C) 1999 American Institute of Physics. [S0003-6951(99)04634-3].

引用

页码：1125 / 1127

页数：3

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