Large transmittance changes near the ultraviolet region observed on a laminated multilayer structure of Ga2O3 and In2O3 prepared by the pulsed laser deposition method

被引：7

作者：

Aoki, T

Suzuki, A

Matsushita, T

Kaimi, H

Okuda, M

机构：

[1] Osaka Sangyo Univ, Dept Elect Engn & Elect, Osaka 5740013, Japan

[2] Univ Osaka Prefecture, Coll Engn, Dept Phys & Elect, Sakai, Osaka 5918231, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 08期

关键词：

large transmittance changes; optical recording film near ultraviolet region; PLD; split target; laminated structure of Ga2O3 and In2O3;

D O I：

10.1143/JJAP.38.4802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films (d = 120-150 nm) with a laminated structure of Ga2O3 and In2O3 have been deposited using the split target constructed of Ga2O3 and In2O3 by a pulsed laser deposition technique with an ArF laser. The transmittance change between the as-deposited and the annealed states for the film with the trace ratio of Ga : In = 3 : 1 (the weight percent ratio of Ga : In = 5.5 : 1) was 65 % at the wavelength of 350 nm.

引用

页码：4802 / 4803

页数：2

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