Ion beam etching of GaAs: Influence of etching parameters on the degree of radiation damage

被引：7

作者：

Borzenko, TB ^{[1
]}

Koval, YI ^{[1
]}

Kulik, LV ^{[1
]}

Larionov, AV ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST SOLID STATE PHYS,MOSCOW 142432,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 17期

关键词：

D O I：

10.1063/1.118841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The possibility of decreasing the radiation damage of GaAs during ion beam etching was investigated with the help of a photoluminescence spectra study of GaAs/InGaAs/GaAs heterostructures with near surface quantum wells. It was shown that the change of normal ion incidence to oblique and the decrease of the sample temperature to that of liquid nitrogen cause minimum radiation damage to GaAs. (C) 1997 American Institute of Physics.

引用

页码：2297 / 2299

页数：3

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