FORMATION OF HIGHLY MOBILE DEFECTS IN GAAS UNDER AR-PLASMA ETCHING

被引：11

作者：

DUBONOS, SV

KOVESHNIKOV, SV

机构：

[1] Institute of Microelectronics Technology, Academy of Sciences of the USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 120卷 / 01期

关键词：

D O I：

10.1002/pssa.2211200105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The process of defect formation in GaAs under Ar‐plasma etching is investigated by using DLTS. Defects introduced are indentified with the components of Frenkel pairs possessing high mobility even at room temperature. Their penetration to the depth of some μm below the surface is discussed in the frame of the diffusion process. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：77 / 81

页数：5

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