PLASMA STIMULATED IMPURITY REDISTRIBUTION IN SILICON

被引：18

作者：

KOVESHNIKOV, SV

YAKIMOV, EB

YARYKIN, NA

YUNKIN, VA

机构：

[1] Acad of Sciences of the USSR, Russia

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 111卷 / 01期

关键词：

18;

D O I：

10.1002/pssa.2211110108

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：81 / 88

页数：8

共 18 条

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[6]

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[7]

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[8]

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[9] TEMPERATURE RISE DURING FILM DEPOSITION BY RF AND DC SPUTTERING [J].

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MUTH, DG .

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[10] CHARACTERIZATION OF REACTIVE ION ETCHED SILICON SURFACE BY DEEP LEVEL TRANSIENT SPECTROSCOPY [J].

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