SURFACE DAMAGE ON SI SUBSTRATES CAUSED BY REACTIVE SPUTTER ETCHING

被引：100

作者：

YABUMOTO, N

OSHIMA, M

MICHIKAMI, O

YOSHII, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 05期

关键词：

D O I：

10.1143/JJAP.20.893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：893 / 900

页数：8

共 12 条

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[8]

LEHMANN HW, 1978, J VAC SCI TECHNOL, V15, P327

[9] PREFERENTIAL SIO2 ETCHING ON SI SUBSTRATE BY PLASMA REACTIVE SPUTTER ETCHING [J].

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