Synthesis of homogeneous pentenary chalcopyrite alloys with a classical two-step growth process

被引：9

作者：

Dhlamini, FD ^{[1
]}

Alberts, V ^{[1
]}

机构：

[1] Rand Afrikaans Univ, Dept Phys, Sydney, NSW 2006, Australia

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2005年 / 66卷 / 11期

关键词：

alloys; semiconductors; thin films; x-ray diffraction; photoelectron spectroscopy;

D O I：

10.1016/j.jpcs.2005.09.009

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Homogeneous single-phase Cu(In0.75Ga0.25)(Se1-ySy)(2) chalcopyrite alloys were prepared by a novel two-step growth process. CuIn0.75Ga0.25 precursors were deposited by DC magnetron sputtering and the subsequent reaction processes in a reactive H2Se/Ar/H2S atmosphere was optimized to prevent the formation and separation of stable ternary phases. X-ray diffraction (XRD) analysis of these films revealed characteristic chalcopyrite peaks with a high degree of symmetry, indicative of homogeneous rather than compositionally graded material. The lattice parameters of the single-phase Cu(In0.75Ga0.25)(Se1-ySy)(2) pentenary alloys decreased linearly with an increase in the S/(S+Se) ratio in accordance with Vegard's law. X-ray photoelectron spectroscopy (XPS) depth profiling confirmed the in-depth compositional uniformity of the pentenary alloys, prepared under optimized selenization/sulfurization conditions. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1880 / 1882

页数：3