An HDR CMOS image sensor with spiking pixels, pixel-level ADC, and linear characteristics

被引：32

作者：

Döge, J ^{[1
]}

Schönfelder, G

Streil, GT

König, A

机构：

[1] Dresden Univ Technol, Chair Elect Devices & Integrated Circuits, D-01062 Dresden, Germany

[2] SARAD GmbH, D-01705 Dresden Pesterwitz, Germany

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING | 2002年 / 49卷 / 02期

关键词：

CMOS image sensors; high dynamic range; high value resolution; pixel-level analog-to-digital (AJD) conversion;

D O I：

10.1109/TCSII.2002.1002518

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high dynamic range (HDR) CMOS image sensor architecture based on spiking pixel cells and its first implementation, a linear 128-pixel sensor, is presented. The pulse rate of the pixel cell is proportional to the local light intensity. The pixel cell features a pixel-level analog-to-digital (A/D) conversion by pulse counting. It allows to tradeoff conversion precision versus frame rate. Sample sensor chips have been manufactured using a 0.8-mum double metal CMOS technology, and the test results confirming the feasibility of the chosen approach are reported.

引用

页码：155 / 158

页数：4

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