Novel copolymers incorporating dithieno[3,2-b:2′,3′-d]thiophene moieties for air-stable and high performance organic field-effect transistors

被引：48

作者：

Lu, Kun ^{[1
]}

Di, Chong-an ^{[1
]}

Xi, Hongxia ^{[1
]}

Liu, Yunqi ^{[1
]}

Yu, Gui ^{[1
]}

Qiu, Wenfeng ^{[1
]}

Zhang, Hengjun ^{[1
]}

Gao, Xike ^{[1
]}

Liu, Ying ^{[1
]}

Qi, Ting ^{[1
]}

Du, Chunyan ^{[1
]}

Zhu, Daoben ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2008年 / 18卷 / 29期

关键词：

D O I：

10.1039/b801603h

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A series of semiconducting copolymers incorporating dithieno[3,2-b:2',3'-d] thiophene moieties in the polythiophene backbone were synthesized. The resulting four copolymers are found to have large band gap (similar to 2.5 eV) and large ionization potential (-5.1 eV). Organic field-effect transistors were fabricated by spin-coating polymer solutions onto OTS-modified SiO(2)/Si substrates with top-contact configuration. The best resulting hole mobility afforded was 0.028 cm(2) V(-1) s(-1) with an on/off ratio of 2 x 10(4) and a threshold voltage of about -18.9 V in the saturation regime. Furthermore, all the devices exhibited high environmental stability against oxygen doping and relatively high ambient humidity (similar to 30%).

引用

页码：3426 / 3432

页数：7

共 42 条

[1] A convenient and improved synthesis of dithieno[3,2-b:2′,3′-d]thiophene [J].