Stochastic modeling of molecular charge transport networks

被引：46

作者：

Baumeier, Bjoern ^{[1
]}

Stenzel, Ole ^{[2
]}

Poelking, Carl ^{[1
]}

Andrienko, Denis ^{[1
]}

Schmidt, Volker ^{[2
]}

机构：

[1] Max Planck Inst Polymer Res, D-55128 Mainz, Germany

[2] Univ Ulm, Inst Stochast, D-89069 Ulm, Germany

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 18期

关键词：

ORGANIC SEMICONDUCTORS; ALQ(3); SIMULATION; DEVICES; DESIGN;

D O I：

10.1103/PhysRevB.86.184202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We develop a stochastic network model for charge transport simulations in amorphous organic semiconductors, which generalizes the correlated Gaussian disorder model to realistic morphologies, charge transfer rates, and site energies. The network model includes an iterative dominance-competition model for positioning vertices (hopping sites) in space, distance-dependent distributions for the vertex connectivity and electronic coupling elements, and a moving-average procedure for assigning spatially correlated site energies. The field dependence of the hole mobility of the amorphous organic semiconductor, tris-(8-hydroxyquinoline)aluminum, which was calculated using the stochastic network model, showed good quantitative agreement with the prediction based on a microscopic approach.

引用

页数：7

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