Band structure evolution in InAs overlayers on GaAs(110)

被引：4

作者：

He, ZQ ^{[1
]}

Ilver, L ^{[1
]}

Kanski, J ^{[1
]}

Nilsson, PO ^{[1
]}

Songsiriritthigul, P ^{[1
]}

Holmen, G ^{[1
]}

Karlsson, UO ^{[1
]}

机构：

[1] ROYAL INST TECHNOL,DEPT PHYS MAT PHYS,S-10044 STOCKHOLM,SWEDEN

来源：

APPLIED SURFACE SCIENCE | 1996年 / 104卷

关键词：

D O I：

10.1016/S0169-4332(96)00210-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An angle-resolved photoemission study of MBE grown InAs/GaAs(110) hetero-structures was carried out to investigate the establishment of valence bands as a function of overlayer thickness. The valence band spectra were found to change gradually up to thicknesses well above 10 nm. The data are interpreted in terms of excitations within the overlayer from a combination of substrate and overlayer initial states, the former tailing into the overlayer.

引用

页码：608 / 614

页数：7

共 16 条

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