MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS AND OTHER COMPOUND SEMICONDUCTORS

We describe recent progress in the field of molecular beam epitaxial growth of GaAs and other compound semiconductors with some attention given to the application of these materials to device technology. Our review is centered around structures grown on GaAs substrates but attention is also given to GaAs grown on silicon substrates and to InGaAs-InAlAs-InP heterostructures grown on InP substrates. The growth and properties of state-of-the-art GaAs-AlAs, GaAs-Ge and InGaAs-InAlAs-InP heterostructures are detailed. In the sections devoted to the lattice-mismatched heteroepitaxial GaAs on silicon and InSb on GaAs systems more attention is paid to the crucial growth techniques necessary to obtain high quality material while device performance is also included.