Nitridation of the GaAs(001) surface: Thermal behavior of the (3x3) reconstruction and its evolution

被引：5

作者：

Lu, J ^{[1
]}

Haworth, L ^{[1
]}

Hill, P ^{[1
]}

Westwood, DI ^{[1
]}

Macdonald, JE ^{[1
]}

机构：

[1] Univ Wales, Dept Phys & Astron, Cardiff CF2 3YB, S Glam, Wales

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 04期

关键词：

D O I：

10.1116/1.590806

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The nitridation of the GaAs(001) surface using a radio frequency atomic nitrogen plasma source in a molecular beam epitaxy growth chamber has been studied. The resulting nitrogen induced GaAs(001) (3X3) reconstruction was investigated by in situ reflection high energy electron diffraction and x-ray photoemission spectroscopy (XPS). It was found that this reconstruction is only obtained in the temperature range 400-580 degrees C with a very low dose of atomic nitrogen. The nitrogen coverage corresponding to the (3X3) reconstruction was determined by quantitative XPS to be 0.30+/-0.09 ML, Below 400 degrees C an As-N species of disordered structure was found on the GaAs(001) surface. Subsequent annealing at about 500 degrees C produced the (3X3) reconstruction. Above 580 degrees C, nitridation lead to direct formation of beta-GaN islands. In addition, the (3X3) reconstruction was found to be unstable to both exposure to atomic hydrogen and annealing. The N desorption activation energy of the (3X3) was estimated to be 2.75+/-0.55 eV. A surface phase diagram of the (3X3) has thus been deduced. (C) 1999 American Vacuum Society. [S0734-211X(99)08804-6].

引用

页码：1659 / 1665

页数：7

共 25 条

[1] Microscopic processes during electron cyclotron resonance microwave nitrogen plasma-assisted molecular beam epitaxial growth of GaN/GaAs heterostructures: Experiments and kinetic modeling [J].

Bandic, ZZ ;

McGill, TC ;

Hauenstein, RJ ;

OSteen, ML .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04) :2948-2951

[2] SURFACE RECONSTRUCTIONS OF ZINCBLENDE GAN/GAAS(001) IN PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY [J].

BRANDT, O ;

YANG, H ;

JENICHEN, B ;

SUZUKI, Y ;

DAWERITZ, L ;

PLOOG, KH .

PHYSICAL REVIEW B, 1995, 52 (04) :R2253-R2256

[3] NITRIDATION OF GAAS SINGLE-CRYSTAL SURFACES USING HYDRAZOIC ACID AND 308 NM PHOTON BEAMS [J].

BU, Y ;

LIN, MC .

SURFACE SCIENCE, 1994, 317 (1-2) :152-164

[4] X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF INTERACTION OF OXYGEN AND NITRIC-OXIDE WITH ALUMINUM [J].

CARLEY, AF ;

ROBERTS, MW .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1978, 363 (1714) :403-424

[5] SELECTIVE GROWTH OF ZINCBLENDE, WURTZITE, OR A MIXED-PHASE OF GALLIUM NITRIDE BY MOLECULAR-BEAM EPITAXY [J].

CHENG, TS ;

JENKINS, LC ;

HOOPER, SE ;

FOXON, CT ;

ORTON, JW ;

LACKLISON, DE .

APPLIED PHYSICS LETTERS, 1995, 66 (12) :1509-1511

[6] STRUCTURE CONTROL OF GAN FILMS GROWN ON (001) GAAS SUBSTRATES BY GAAS SURFACE PRETREATMENTS [J].

FUJIEDA, S ;

MATSUMOTO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B) :L1665-L1667

[7] THERMAL-DECOMPOSITION OF GAN IN VACUUM [J].

GROH, R ;

GEREY, G ;

BARTHA, L ;

PANKOVE, JI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (01) :353-357

[8] Atomic-scale nature of the (3x3)-ordered GaAs(001):N surface prepared by plasma-assisted molecular-beam epitaxy [J].

Gwo, S ;

Tokumoto, H ;

Miwa, S .

APPLIED PHYSICS LETTERS, 1997, 71 (03) :362-364

[9] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF NITROGEN PLASMA INTERACTIONS WITH A GAAS (100) SURFACE [J].

HAUENSTEIN, RJ ;

COLLINS, DA ;

CAI, XP ;

OSTEEN, ML ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1995, 66 (21) :2861-2863

[10] Nitridation of the GaAs (001) surface using atomic nitrogen [J].

Hill, P ;

Westwood, DI ;

Haworth, L ;

Lu, J ;

Macdonald, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04) :1133-1138

← 1 2 3 →