Quantitative determination of Ge profiles across SiGe wetting layers on Si (001)

被引：28

作者：

Brehm, M. ^{[1
]}

Grydlik, M. ^{[1
]}

Lichtenberger, H. ^{[1
]}

Fromherz, T. ^{[1
]}

Hrauda, N. ^{[1
]}

Jantsch, W. ^{[1
]}

Schaeffler, F. ^{[1
]}

Bauer, G. ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Halbleiter U Festkorperphys, Linz, Austria

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

基金：

奥地利科学基金会;

关键词：

D O I：

10.1063/1.2988261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The peak positions in photoluminescence spectra of Ge wetting layers (WL) deposited at 700 degrees C were measured versus the Ge coverage with an extremely high relative resolution of 0.025 monolayers. A nearly linear redshift of the peaks with increasing Ge coverage is observed. We derived quantitative WL composition profiles by fitting this shift, and its dependence on the deposition temperature of the capping layer (T(c)), to results of band structure calculations. Despite the high growth temperature, the Ge content in the WL exceeds 80%. It is shown that the composition profile is dominated by surface segregation of Ge on Si. (C) 2008 American Institute of Physics.

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页数：3

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