Origin of lattice strain in nanocrystalline materials

被引：80

作者：

Qin, W

Szpunar, JA

机构：

[1] McGill Univ, Dept Met & Mat Engn, Montreal, PQ H3A 2B2, Canada

[2] Shanghai Jiao Tong Univ, Res Inst Micro Nanometer Sci & Technol, Minist Educ, Key Lab Thin Film & Microfabricat, Shanghai 200030, Peoples R China

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 2005年 / 85卷 / 12期

关键词：

D O I：

10.1080/09500830500474339

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A striking feature of nanocrystalline (NC) materials prepared by different techniques is the variation of lattice strain present in the crystallites. A simple model is proposed to account for this phenomenon, which allows the establishment of a quantitative relationship describing the dependence of the crystal lattice strain on the grain size. Good agreement between theoretical and experimental data indicates that the stress field, induced by the excess volume in grain boundaries, is the dominant source of the lattice strain.

引用

收藏

页码：649 / 656

页数：8

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